Plasma science platform
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- Plasma science platform
A consistent plasma science platform,
from basic research on low-temperature plasma to
system technology for social implementation
Including the "world's only device" that we developed ourselves,
We maintain 165 pieces of equipment.
With the motto "Original technology is from the original equipment", we have more than 30 plasma sources such as "High density atmospheric pressure plasma source", "High density radical source" and "Plasma beam equipment".
Regarding the plasma process and its analysis, we have a lineup of state-of-the-art and original equipment, and in addition, we have built a system that provides a consistent bird's-eye view by connecting the processes from generation to processing and analysis while maintaining a "vacuum".
The world's most advanced plasma science research is being developed in this.
In addition, we have secured an optimal research environment and installed high-precision equipment and devices for utilization in the fields of medicine and agriculture and fisheries, where expectations are rising.
In the field of industry-government-academia collaboration, we are conducting research and development by fusing the equipment of top manufacturers in each industry with the original equipment of our center for the development of new possibilities of semiconductors and fuel cells and new devices that we have not yet seen.
floor map
Plasma process development
Analyzing system for plasma-beam induced surface reactions
By irradiating the surface of the material with a plasma beam and evaluating it with in-situ XPS, it is possible to analyze the reaction between the surface and plasma.
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Process gasHBr, Ar, CF4, C4F8, Cl2, H2, N2, O
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Physical chemistry analysis
In-situ electron spin resonance (ESR)
Unpaired electrons (dangling bonds) present in the sample can be estimated in real time during the processing with active species generated by plasma. It is also applicable to analysis of gas phase species.
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Bruker EMX Premium X
Sample size5-mm wide in a quartz tube
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Scanning electron microscope (Hitachi High-Technologies Corporation)
Cold FE SEM, semi-in-lens secondary electron detector, backscattered electron detector, EDS, EBSD
Grinding machine (Ikegami Seiki)
It is possible to cross-section the observation sample at a speed about 100 times faster than hand polishing without embedding.
The weight of the sample holder can be reduced and delicate polishing is possible.
Ion milling device (Hitachi High-Technologies Corporation)
By cutting the cross section while cooling the sample to -30 ° C or less, it is possible to prepare a cross-section observation sample with low damage even for materials that are vulnerable to heat damage such as solder and resin.
Ion chromatography (manufactured by SHIMAZU)
It is possible to detect ionic components in liquid samples.
Biosafety level2 lab
Coherent Anti-Stoke Raman Microscope (CARS)
Live cell imaging is possible by resonantly exciting multiple vibration modes called multiplex CARS.
Shield room
Scanning tunneling microscope (STM)
Atomic Force Microscope (AFM) (manufactured by JEOL)
By using the vacuum holding transfer system together, it is possible to observe the surface of the plasma-treated surface without being affected by air pollution.
Plasma etching / new plasma source
Multipurpose autonomous plasma process system
Equipped with in-situ infrared absorption spectroscopy, in-situ spectroscopic ellipsometry, small radical density measurement system, and substrate temperature measurement system, plasma diagnosis during film formation and in-situ evaluation of film quality are possible.
Accelerate research and development by quantitatively diagnosing reactions in real time, rather than trial and error research and development to obtain desired material properties and shapes.
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Process gasH2, N2, Ar, O2, He, CF4, C4F8, SF6
Substrate temperatureControllable between -10°C and 60°C
Sample diameterUp to 100 mm
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Example of nanotrench etching of organic film (SiLK)
Inductively coupled plasma etching equipment for high temperature processes
In Cl2 or BCl3-based plasma etching, high temperature etching process is possible.
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Substrate temperature200 ℃ ~ 600 ℃
Process gasCl2, Ar, N2, BCl3, O2
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NLD dry etching equipment (manufactured by ULVAC)
Dry etching of low voltage, low electron temperature, and high density plasma is possible with magnetic neutral wire plasma (NLD).
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Process gasAr, O2, CF4, C4F8
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Plasma film deposition
Plasma-assisted atomic layer deposition apparatus
A thin film is deposited with layer-by-layer growth of atomic level precision using plasma. In addition, it is possible to evaluate the film quality during film formation by in-situ FTIR.
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Substrate temperature20°C to 600°C
Available gasesSiH4, Ar, N2, H2, O2
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Radical injection type plasma chemical vapor deposition method
Radical-controlled plasma CVD by radical injection enables thin film deposition of various carbon materials.
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Process gasCH4, C2F6, CF4, H2, Ar, O2, N2
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Quadrupole mass spectrometer
(Made by HIDEN)
It is possible to detect ionic species, radical species, etc. in plasma.
AP plasma
Atmospheric pressure IAMS
(Ion Adhesion Mass Spectrometer) (Canon Anerva)
Mass spectrometry of atmospheric pressure plasma is possible.
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Detected mass number1-410
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Vacuum ultraviolet absorption spectrometer (atomic radical monitor)
Measurement system for absolute densities of atomic radicals (hydrogen, nitrogen, oxygen, Carbon, and fluorine) using a microplasma light source. Spatial distribution measurement is also possible.
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| NU-Rei Corporation |
Atmospheric pressure plasma device
(Fuji Machine Manufacturing)
By treating the surface of the material with atmospheric pressure plasma, good bonding between dissimilar materials is possible without using a pre-bonding agent (primer) or the like.
Atmospheric pressure In-situ FTIR
It is possible to observe surface changes during atmospheric pressure plasma processing.
Schlieren device (manufactured by KATO KOKEN)
It is possible to visualize the air flow and the density distribution inside the object.
Clean room
Radical Assisted Chemical Vapor Deposition (CVD) Equipment
Instead of the conventional thermal CVD method that uses a large amount of ammonia and organic metal gas (TMG, etc.) to form a film at a high temperature (1100 ° C or higher), a low temperature (1100 ° C or higher) is supplied by supplying radicals generated by plasma of hydrogen and nitrogen gas. It is possible to form a high-quality nitride semiconductor crystal film on a silicon wafer at (about 800 ° C).
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Process gasN2, H2, TMG, TMA
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Radical Excited Molecular Beam Epitaxy (PAMBE) Device
By installing a proprietary radical source that can generate nitrogen radicals that are 10 times or more denser than conventional remote plasma sources, the height is 2.6 μm / hr., Which is more than 5 times that of conventional sources. Achieves high-speed growth of crystalline GaN.
It has been found that high crystallinity and high-speed growth are realized even in the growth of InGaN, and that the mosaicity hardly increases even in a high In composition (up to 16%).
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Process gasN2, H2
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Agricultural experiment booth
To verify the effect of low temperature plasma treatment on plant growth.
Rice can be cultivated 3 to 4 times a year with an artificial meteorological device equipped with various sensors.
You can check other devices (some) that can be used for shared use.
Related information
Predecessor organization
(※ We do not operate as an organization now.)