Contents 1 Introduction
A fundamental processing step for the fabrication of semiconductor devices is plasma etching (Huff 2021; Krüger et al. 2024). In particular, the patterning of metal-nitrides such as TiN and AlN has been frequently performed using an inductively coupled plasma (ICP) with chlorine and argon gases (Kim et al. 2011; Woo et al. 2011; Lee Sang et al. 2015; Woo et al. 2022). ICP is a means to deliver power to the electrons without the need for elevated temperatures. The electrons then initiate collisions with gas molecules, resulting in the formation of neutral radical species and charged ions (Hori 2022). These two types of species are mainly responsible for surface interactions and ultimate material removal.
