High energy density in artificial heterostructures through relaxation time modulation
Editor’s summary
Avoiding waste heat during capacitor operation is important for improving energy efficiency. Han et al. designed a dielectric heterostructure with barium titanate sandwiched between a two-dimensional material. Charge accumulation at the material interfaces under an alternating electric field changes the relaxation time of the heterostructure. This, in turn, can substantially reduce the energy loss when the right materials are chosen. The authors produced one such structure with high energy density and low loss using two-layer molybdenum disulfide and barium titanate. The general strategy should be useful for refining other dielectric materials. —Brent Grocholski
Abstract
Electrostatic capacitors are foundational components of advanced electronics and high-power electrical systems owing to their ultrafast charging-discharging capability. Ferroelectric materials offer high maximum polarization, but high remnant polarization has hindered their effective deployment in energy storage applications. Previous methodologies have encountered problems because of the deteriorated crystallinity of the ferroelectric materials. We introduce an approach to control the relaxation time using two-dimensional (2D) materials while minimizing energy loss by using 2D/3D/2D heterostructures and preserving the crystallinity of ferroelectric 3D materials. Using this approach, we were able to achieve an energy density of 191.7 joules per cubic centimeter with an efficiency greater than 90%. This precise control over relaxation time holds promise for a wide array of applications and has the potential to accelerate the development of highly efficient energy storage systems.
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Science
Volume 384 | Issue 6693
19 April 2024
19 April 2024
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Copyright © 2024 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.
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Received: 10 October 2023
Accepted: 6 March 2024
Published in print: 19 April 2024
Acknowledgments
Funding: S.-H.B. acknowledges support from the Institute of Materials Science and Engineering (IMSE), Washington University in St. Louis. S.-H.B. acknowledges financial support from the National Science Foundation (grant no. 2240995). S.-H.B. also acknowledges that this work was partially supported by Samsung Electronics Co., Ltd. (IO221219-04250-01). D.-H.K. acknowledges support from a Korea Institute for Advancement of Technology (KIAT) grant funded by the Korean government (MOTIE) [P0017305, Human Resource Development Program for Industrial Innovation (Global)]. J.-H.A. was supported by the National Research Foundation of Korea (2015R1A3A2066337). A.O. acknowledges financial support from Georgia Tech Europe in Metz-France. R.M. was supported by the Army Research Office (ARO) Multidisciplinary University Research Initiative (MURI) under award no.W911NF-21-1-0327 and the NSF through DMR-2122070 and DMR-2145797. This work used computational resources through allocation DMR160007 from the Advanced Cyberinfrastructure Coordination Ecosystem: Services & Support (ACCESS) program, which is supported by the NSF. This work was carried out in part through the use of MIT.nano’s facilities. E.P. acknowledges funding from a MathWorks fellowship.
Author contributions: S.-H.B., S.H., and J.S.K. conceived this study. J.S.K., E.P., Y.M., Z.X., I.R., S.O.K., and Y.L. fabricated the samples and performed the experiment, with the supervision of S.-H.B. and S.H. S.L., X.Z., and B.-I.P. performed the structural performance of samples, under the supervision of J.Ki. J.-Y.M., S.-I.K., H.S., A.T.H., S.Su., P.V., A.O., J.-H.L., and J.-H.A. prepared the 2D materials. G.Y.J. reviewed the theory about dielectric relaxation under the supervision of R.M. E.P., A.C.F., and K.R. performed the STEM and iDPC characterization under the supervision of F.M.R. S.Se. and J.-H.P. analyzed the 2D/3D and 3D/3D interfaces. S.B., C.K., J.Z., C.W., J.Kw., and D.-H.K. performed the electrical measurement. J.H., H.C., and H.-S.K. conducted the breakdown performance. S.-H.B. and S.H. wrote the first draft of the manuscript. All authors discussed the results and revised the manuscript.
Competing interests: S.H. and S.-H.B. are inventors on patent application no. 63/617,314 assigned to Washington University that covers heterostructures that have a van der Waals interface for high–energy density capacitors.
Data and materials availability: All data are available in the main text or the supplementary materials.
License information: Copyright © 2024 the authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original US government works. https://www.science.org/about/science-licenses-journal-article-reuse
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