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Sources claim 3-bit MLC NAND produced by Korea-based supplier problematic
Josephine Lien, Taipei; Jessie Shen, DIGITIMES [Tuesday 29 December 2009]

The first batch of 3-bit multi-level-cell (MLC) NAND flash memory produced by a Korea-based chipmaker appears to perform less stably and consistently than today's 2-bit per cell ones, according to industry sources. The sources did not specify the name of the supplier.

The sources indicated that the supplier's first batch of 3-bit per cell NAND flash chips is only available to China- and US-based device makers, but those shipped to a US customer have been returned due to unstable product quality.

Some controller chip designers have commented that 3-bit per cell chips for mainstream NAND flash devices are still at an early stage, and will need three-months of testing because of compatibility issues.

Taiwan-based memory module houses, which have only received samples of 3-bit NAND chips from the Korea-based vendor, are currently working with their controller suppliers, the sources said. The Taiwan players expect to begin using the chips in end products in the first quarter of 2010, the sources added.

Previous reports quoted industry players as predicting that 70-80% of 2-bit per cell chips used in entry-level flash drives and memory cards will be replaced by 3-bit per cell ones in 2010.

Related stories:

Three-bit per cell NAND flash to take 70-80% share in 2010 (Dec 3)

Samsung ramps 30nm-class NAND flash production (Dec 1)

Taiwan memory module makers brace for NAND flash shortage (Oct 9)

Toshiba and SanDisk reportedly to begin sub-30nm NAND flash production in 2H10 (Sep 21)

Intel, Micron to ship 3-bit per cell NAND flash in 4Q09 (Aug 12)


 
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